CGHV27200

PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P Typical Performance Over 2.5 - 2.7 GHz Parameter Gain @ 47 dBm ACLR @ 47 dBm Drain Efficiency @ 47 dBm 2.5 GHz 15.0 -36.5 29.0 (TC = 25˚C) 2.6 GHz 16.0 -37.5 28.5 of Demonstration Amplifier 2.7 GHz 16.0 -37.0 29.0 Units dB dBc % Note: Measured in the CGHV27200-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. Features 2.5 - 2.7 GHz Operation 16 dB Gain -37 dBc ACLR at 50 W PAVE ober 2012 Rev 0.1 – Oct 29 % Efficiency at 50 W PAVE High Degree of DPD Correction Can be Applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature Screw Torque Thermal Resistance, Junction to Case3 Thermal Resistance, Junction to Case Case Operating Temperature5 4 2 Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS Rating 125 -10,...