Document
PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P
Typical Performance Over 2.5 - 2.7 GHz
Parameter Gain @ 47 dBm ACLR @ 47 dBm Drain Efficiency @ 47 dBm 2.5 GHz 15.0 -36.5 29.0
(TC = 25˚C)
2.6 GHz 16.0 -37.5 28.5
of Demonstration Amplifier
2.7 GHz 16.0 -37.0 29.0 Units dB dBc %
Note: Measured in the CGHV27200-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
• 2.5 - 2.7 GHz Operation • 16 dB Gain • -37 dBc ACLR at 50 W PAVE
ober 2012 Rev 0.1 – Oct
• 29 % Efficiency at 50 W PAVE • High Degree of DPD Correction Can be Applied
Subject to change without notice. www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature Screw Torque Thermal Resistance, Junction to Case3 Thermal Resistance, Junction to Case Case Operating Temperature5
4 2
Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS
Rating 125 -10, +2 -65, +150 225 32 12 245 80 1.22 1.54 -40, +150
Units Volts Volts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C/W ˚C
Units 25˚C 25˚C
25˚C 25˚C
τ
RθJC RθJC TC
85˚C, PDISS = 96 W 85˚C, PDISS = 96 W 30 seconds
Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV27200P 4 Measured for the CGHV27200F 5 See also, the Power Dissipation De-rating Curve on Page 6
Electrical Characteristics (TC = 25˚C)
Characteristics DC Characteristics1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current2 Drain-Source Breakdown Voltage
5
Symbol
Min.
Typ.
Max.
Units
Conditions
VGS(th) VGS(Q) IDS VBR
-3.8 – 24 125
-3.0 -2.7 28.8 –
-2.3 – – –
VDC VDC A VDC
VDS = 10 V, ID = 32 mA VDS = 50 V, ID = 1.0 A VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 32 mA
RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) Saturated Output Power3,4 Pulsed Drain Efficiency3 Gain6 WCDMA Linearity Drain Efficiency6 Output Mismatch Stress3 Dynamic Characteristics Input Capacitance7 Output Capacitance
7 6
PSAT
η
– – – – – –
300 62 15.25 -37 30.5 –
– – – – – 10 : 1
W % dB dBc % Y
VDD = 50 V, IDQ = 1.0 A VDD = 50 V, IDQ = 1.0 A, POUT = PSAT VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm No damage at all phase angles, VDD = 50 V, IDQ = 1.0 A, POUT = 200 W Pulsed
G ACLR
η
VSWR
CGS CDS CGD
– – –
97 13.4 0.9.