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CGHV27200 Dataheets PDF



Part Number CGHV27200
Manufacturers Cree
Logo Cree
Description GaN HEMT
Datasheet CGHV27200 DatasheetCGHV27200 Datasheet (PDF)

PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P Typical Performance Over 2.5 - 2.7 GHz Paramete.

  CGHV27200   CGHV27200



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PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P Typical Performance Over 2.5 - 2.7 GHz Parameter Gain @ 47 dBm ACLR @ 47 dBm Drain Efficiency @ 47 dBm 2.5 GHz 15.0 -36.5 29.0 (TC = 25˚C) 2.6 GHz 16.0 -37.5 28.5 of Demonstration Amplifier 2.7 GHz 16.0 -37.0 29.0 Units dB dBc % Note: Measured in the CGHV27200-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. Features • 2.5 - 2.7 GHz Operation • 16 dB Gain • -37 dBc ACLR at 50 W PAVE ober 2012 Rev 0.1 – Oct • 29 % Efficiency at 50 W PAVE • High Degree of DPD Correction Can be Applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature Screw Torque Thermal Resistance, Junction to Case3 Thermal Resistance, Junction to Case Case Operating Temperature5 4 2 Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS Rating 125 -10, +2 -65, +150 225 32 12 245 80 1.22 1.54 -40, +150 Units Volts Volts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C/W ˚C Units 25˚C 25˚C 25˚C 25˚C τ RθJC RθJC TC 85˚C, PDISS = 96 W 85˚C, PDISS = 96 W 30 seconds Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV27200P 4 Measured for the CGHV27200F 5 See also, the Power Dissipation De-rating Curve on Page 6 Electrical Characteristics (TC = 25˚C) Characteristics DC Characteristics1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current2 Drain-Source Breakdown Voltage 5 Symbol Min. Typ. Max. Units Conditions VGS(th) VGS(Q) IDS VBR -3.8 – 24 125 -3.0 -2.7 28.8 – -2.3 – – – VDC VDC A VDC VDS = 10 V, ID = 32 mA VDS = 50 V, ID = 1.0 A VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 32 mA RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) Saturated Output Power3,4 Pulsed Drain Efficiency3 Gain6 WCDMA Linearity Drain Efficiency6 Output Mismatch Stress3 Dynamic Characteristics Input Capacitance7 Output Capacitance 7 6 PSAT η – – – – – – 300 62 15.25 -37 30.5 – – – – – – 10 : 1 W % dB dBc % Y VDD = 50 V, IDQ = 1.0 A VDD = 50 V, IDQ = 1.0 A, POUT = PSAT VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm No damage at all phase angles, VDD = 50 V, IDQ = 1.0 A, POUT = 200 W Pulsed G ACLR η VSWR CGS CDS CGD – – – 97 13.4 0.9.


3DD3853 CGHV27200 IS25CD512


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