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IS25LQ080

ISSI

8Mbit Single Operating Voltage Serial Flash Memory

8 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface IS25LQ08...


ISSI

IS25LQ080

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Description
8 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface IS25LQ080 FEATURES Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V Memory Organization - IS25LQ080: 1024K x 8 (8 Mbit) Cost Effective Sector/Block Architecture - 8Mb : Uniform 4KByte sectors / sixteen uniform 64KByte blocks Serial Peripheral Interface (SPI) Compatible - Supports single-, dual- or quad-output - Supports SPI Modes 0 and 3 - Maximum 33 MHz clock rate for normal read - Maximum 104 MHz clock rate for fast read - Maximum 208MHz clock rate - Maximum 400MHz clock rate equivalent Quad SPI Byte Program Operation - Typical 10 us/Byte Page Program (up to 256 Bytes) Operation - Maximum 0.7ms per page program Sector, Block or Chip Erase Operation - Sector Erase (4KB)150ms (Typ) - Block Erase (64KB)500ms (Typ) - Chip Erase 2s (8Mb) Low Power Consumption - Max 12 mA active read current - Max 20 mA program/erase current - Max 30 uA standby current Hardware Write Protection - Protect and unprotect the device from write operation by Write Protect (WP#) Pin Software Write Protection - The Block Protect (BP3, BP2, BP1, BP0) bits allow partial or entire memory to be configured as read-only High Product Endurance - Guaranteed 100,000 program/erase cycles per single sector - Minimum 20 years data retention Industrial Standard Pin-out and Package - 8-pin 208mil SOIC - 8-pin 150mil VVSOP - 8-contact WSON - PDIP - Lead-free (Pb-free...




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