SPN2306W

SPN2306W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2306W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  30V/5.4A,RDS(ON)=38mΩ@VGS=10V  30V/4.6A,RDS(ON)=42mΩ@VGS=4.5V  30V/3.8A,RDS(ON)=55mΩ@VGS=2.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2020/1/15 Ver.2 Page 1 SPN2306W N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number SPN2306WS23RGB ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2306WS23RGB : Tape Reel ; Pb – Free Package SOT-23 Part Marking S06W ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Curr...