SPP2311

SPP2311 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  P-Channel -30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V -30V/0.25A,RDS(ON)=3.0Ω@VGS=-1.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  ESD protected  SOT-23 package design PIN CONFIGURATION( SOT-23 ) PART MARKING 2022/9/28 Ver.4 Page 1 SPP2311 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP2311S23RGB SOT-23 ※ SPP2311S23RGB : Tape Reel ; Pb – Free, Halogen – Free Part Marking S11 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate –Source Voltage VGSS ±12 ...