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SPP2345 Dataheets PDF



Part Number SPP2345
Manufacturers SYNC POWER
Logo SYNC POWER
Description P-Channel MOSFET
Datasheet SPP2345 DatasheetSPP2345 Datasheet (PDF)

SPP2345 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small.

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SPP2345 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -20V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V  -20V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V  -20V/-2.3A,RDS(ON)=130mΩ@VGS=-1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2020/01/13 Ver.4 Page 1 SPP2345 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D ORDERING INFORMATION Part Number Package SPP2345S23RGB SOT-23 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP2345S23RGB : Tape Reel ; Pb – Free; Halogen – Free Description Gate Source Drain Part Marking S45 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature TA=25℃ TA=70℃ Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -20 ±12 -3.5 -2.8 -10 -1.6 1.25 0.8 150 -55/150 120 Unit V V A A A W ℃ ℃ ℃/W 2020/01/13 Ver.4 Page 2 SPP2345 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS VDS=0V,VGS=±10V IDSS ID(on) RDS(on) VDS=-16V,VGS=0V VDS=-16V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-4.5V VDS≦-5V,VGS=-2.5V VGS=-4.5V,ID=-3.3A VGS=-2.5V,ID=-2.8A VGS=-1.8V,ID=-2.3A gfs VDS=-5V,ID=-3.5A VSD IS=-1.5A,VGS=0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=-6V,VGS=-4.5V ID≡-2.8A VDS=-6V,VGS=0V f=1MHz VDD=-6V,RL=6Ω ID≡-1.0A,VGEN=-4.5V RG=6Ω Min. Typ Max. Unit -20 -0.45 V -0.90 ±100 nA -1 uA -10 -4 A -2 60 70 72 85 mΩ 115 130 8.5 S -0.8 -1.2 V 4.8 8 1.0 nC 1.0 485 85 pF 40 10 16 13 23 nS 18 25 15 20 2020/01/13 Ver.4 Page 3 SPP2345 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/01/13 Ver.4 Page 4 SPP2345 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/01/13 Ver.4 Page 5 SPP2345 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/01/13 Ver.4 Page 6 SPP2345 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/01/13 Ver.4 Page 7 .


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