SPP3467
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3467 is the P-Channel logic enhancement mode power field e...
SPP3467
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3467 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES -20V/-5.0A,RDS(ON)=90mΩ@VGS=-4.5V -20V/-3.5A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=140mΩ@VGS=-1.8V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23-6L package design
PIN CONFIGURATION(SOT-23-6L)
PART MARKING
2020/02/19 Ver.4
Page 1
SPP3467
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol D D G S D D
Description Drain Drain Gate Source Drain Drain
ORDERING INFORMATION
Part Number
Package
SPP3467S26RGB
SOT-23-6L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3467S26RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking 67
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(T...