SPP6307
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6307 is the Dual P-Channel enhancement mode power field ef...
SPP6307
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6307 is the Dual P-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
FEATURES P-Channel
-20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-363 package design
PIN CONFIGURATION( SOT-363 )
PART MARKING
2022/09/29 Ver.4
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SPP6307
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source 1 Gate 1 Drain 2
Source 2 Gate 2 Drain1
ORDERING INFORMATION
Part Number
Package
SPP6307S36RGB
SOT-363
※ SPP6307S36RGB : Tape Reel ; Pb – Free, Halogen – Fre
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃...