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PMEG4010EPK

NXP Semiconductors

40V 1A low VF MEGA Schottky barrier rectifier

PMEG4010EPK 62 '   40 V, 1 A low VF MEGA Schottky barrier rectifier Rev. 2 — 6 March 2012 Product data sheet 1. Pr...


NXP Semiconductors

PMEG4010EPK

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PMEG4010EPK 62 '   40 V, 1 A low VF MEGA Schottky barrier rectifier Rev. 2 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits  Average forward current: IF(AV) ≤ 1 A  Reverse voltage: VR ≤ 40 V  Low forward voltage VF ≤ 600 mV  Low reverse current  AEC-Q101 qualified  Solderable side pads  Package height typ. 0.37 mm  Ultra small and leadless SMD plastic package 1.3 Applications  Low voltage rectification  High efficiency DC-to-DC conversion  Switch mode power supply  LED backlight for mobile application  Low power consumption applications  Ultra high-speed switching  Reverse polarity protection 1.4 Quick reference data Table 1. Symbol IF(AV) Quick reference data Parameter average forward current Conditions δ = 0.5; f = 20 kHz; Tamb ≤ 90 °C; square wave δ = 0.5; f = 20 kHz; Tsp ≤ 135 °C; square wave VR VF IR trr reverse voltage forward voltage reverse current reverse recovery time Tj = 25 °C IF = 1 A; pulsed; tp ≤ 300 µs; δ≤ 0.02; Tj =2 5° C VR =1 0V ; Tj = 25 °C IR =0 .5 A; IF = 0.5 A; IR(meas) =0 .1 A; Tj =2 5 °C [1] Min --4 -3 Typ - Max 1 1 0 Unit A A V mV µA s 540 0.6 600 4 -n [1] Device mounted on a ceramic Printed-Ci...




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