DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD MGBR20U100C
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
Preliminary
DIODE
The UTC M...
Description
UNISONIC TECHNOLOGIES CO., LTD MGBR20U100C
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
Preliminary
DIODE
The UTC MGBR20U100C is a dual mos g ated barrier rectifiers, it uses UT C’s a dvanced tech nology to pr ovide cust omers with lo w forward voltage drop and high switching speed, etc.
FEATURES
* Ultra low forward voltage drop * High switching speed
SYMBOL
ORDERING INFORMATION
Package TO-220 Pin Assignment 1 2 3 A K A Packing Tube
Ordering Number Lead Free Halogen Free MGBR20U100CL-TA3-T MGBR20U100CG-TA3-T Note: Pin Assignment: A: Anode, K: Cathode
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R601-162.a
http://www.Datasheet4U.com
MGBR20U100C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 100 V Working Peak Reverse Voltage VRWM 100 V Peak Repetitive Reverse Voltage VRRM 100 V Per Leg 10 A Average Rectified Output Current Per Device IO Total 2 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM 250 A Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation i...
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