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MGBR20U50 Dataheets PDF



Part Number MGBR20U50
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description DUAL MOS GATED BARRIER RECTIFIER
Datasheet MGBR20U50 DatasheetMGBR20U50 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD MGBR20U50 MOS GATED BARRIER RECTIFIER  DESCRIPTION Preliminary DIODE The UT C MGBR20U50 is a surface mount mos gated barrier rectifier, it uses U TC’s advanced technology to provid e customers with low forward voltage drop and high switching speed etc. The UTC MGBR20U50 suitable for supply applications.  FEATURES * Ultra low forward voltage drop * High switching speed  SYMBOL  ORDERING INFORMATION Package TO-220-2 DFN-8(5×6) Pin Assignment 1 2 3 4 5 6.

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UNISONIC TECHNOLOGIES CO., LTD MGBR20U50 MOS GATED BARRIER RECTIFIER  DESCRIPTION Preliminary DIODE The UT C MGBR20U50 is a surface mount mos gated barrier rectifier, it uses U TC’s advanced technology to provid e customers with low forward voltage drop and high switching speed etc. The UTC MGBR20U50 suitable for supply applications.  FEATURES * Ultra low forward voltage drop * High switching speed  SYMBOL  ORDERING INFORMATION Package TO-220-2 DFN-8(5×6) Pin Assignment 1 2 3 4 5 6 7 8 K A - - - - - A A A NC K K K K Packing Tube Tape Reel Ordering Number Lead Free Halogen Free MGBR20U50L-TA2-T MGBR20U50G-TA2-T MGBR20U50L-K08-5060-R MGBR20U50G-K08-5060-R Note: Pin Assignment: A: Anode, K: Cathode MGBR20U50L-TA2-T (1)Packing Type (2)Package Type (3)Lead Free (1) T: Tube, R: Tape Reel (2) TA2: TO-220-2, K08-5060: DFN-8(5×6) (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-132.a http://www.Datasheet4U.com MGBR20U50  Preliminary DIODE ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 50 V Working Peak Reverse Voltage VRWM 50 V Peak Repetitive Reverse Voltage VRRM 50 V Average Rectified Forward Current IO 20 A (Rated VR-20Khz Square Wave) - 50% Duty Cycle Peak Forward Surge Current - 1/2 60hz IFSM 300 A Peak Repetitive Reverse Surge Current (2uS-1Khz) IRRM 2 A Maximum Rate of Voltage Change ( at Rated VR ) dv/dt 10000 V/μS Operating Junction Temperature TJ -65~ +150 °C Storage Junction Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL TO-220-2 DFN-8(5×6) θJA RATINGS 60 72 UNIT °C/W Junction to Ambient  ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) SYMBOL V(BR)R MIN TYP MAX UNIT V 0.48 V 0.43 V 500 µA 100 mA PARAMETER Reverse Breakdown Voltage (Note 1) TEST CONDITIONS IR=0.50mA 50 IF=20A, TJ=25°C Forward Voltage VFM IF=20A, TJ=125°C VR=50V, TJ=25°C Reverse Current (Note 1) IRM VR=50V, TJ=125°C Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Thermal resistance junction to case mounted on heatsink. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R601-132.a MGBR20U50 Preliminary DIODE UTC a ssumes n o r esponsibility f or e quipment f ailures that r esult f rom u sing p roducts a t values th at exceed, ev en momentarily, r ated values (s uch as maximum rati ngs, ope rating condition ra nges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not de signed for us e i n l ife support appliances, de vices or systems w here malfunction of thes e products can be rea sonably expected to result in per sonal injury. R eproduction in whole or i n par t is prohibited without the prior w ritten con sent of the co pyright owner. The information presented i n this do cum ent does no t form part of any quotati on or contract, is believed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R601-132.a .


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