Power Transistors
2SC3743
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Uni...
Power
Transistors
2SC3743
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
10.0±0.2
4.2±0.2
■ Features
5.5±0.2
2.7±0.2
High-speed switching Wide safe operation area and high breakdown voltage
φ 3.1±0.1
Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one
screw
1.4±0.1
1.3±0.2
/ ■ Absolute Maximum Ratings TC = 25°C
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+–00..12
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
900
V
c e. d ty Collector-emitter voltage (E-B short) VCES
900
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
800
V
a e cle con Emitter-base voltage (Collector open) VEBO
7
V
lifecy , dis Base current
IB
1
A
n u duct typed Collector current
IC
3
A
te tin Pro ed Peak collector current
ICP
5
A
ur tinu Collector power dissipation
PC
40
W
ing fo iscon Ta = 25°C
2
in n follow ed d Junction temperature
Tj
150
°C
s lan Storage temperature
Tstg −55 to +150 °C
a coed inclucdeetype, p ■ Electrical Characteristics TC = 25°C ± 3°C
M is ntinu tenan Parameter
Symbol
Conditions
isco ain Collector-emitter voltage (Base open) e/D e, m Collector-base cutoff current (Emitter open)
D nanc e typ Emitter-base cutoff current (Collector open)
inte anc Forward current transfer ratio Mamainten Collector-emitter saturation voltage ned ...
