TK3P50D

MOSFETs Silicon N-Channel MOS (π-MOS) TK3P50D 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.3 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK3P50D 1: Gate (G) 2: Drain (D)(HEAT SINK) 3: Source (S) DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 3 A Drain current (pulsed) (Note 1) IDP 6 Power dissipation (Tc = 25) PD 60 W Single-pulse avalanche energy (Note 2) EAS 81 mJ Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 6 mJ Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i....