MJE253G

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features High Collector−Emitter Sustaining Voltage High DC Current Gain Low Collector−Emitter Saturation Voltage High Current Gain Bandwidth Product Annular Construction for Low Leakages These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCB VEB IC ICM IB PD 100 Vdc 100 Vdc 7.0 Vdc 4.0 Adc 8.0 Adc 1.0 Adc 15 W 120 mW/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.5 W 12 mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 8.34 Thermal Resistance, Junction−to−Ambient RqJA 83.4 Unit _C/W _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ...