GOLD METALIZED SILICON DMOS RF FET
POIN T NINE
Te c h n o l o g i e s , Inc.
D4014 TetraFET
55W - 28V - 1GHz
GOLD METALIZED SILICON DMOS RF FET
FEATURES
...
Description
POIN T NINE
Te c h n o l o g i e s , Inc.
D4014 TetraFET
55W - 28V - 1GHz
GOLD METALIZED SILICON DMOS RF FET
FEATURES
METAL GATE EXTRA LOW Crss BROAD BAND SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN (TCASE = 25°C unless otherwise stated) PD BVDSS VGSS ID Tstg Tj RØj-c Power Dissipation Drain-source breakdown voltage Gate-source voltage Drain Current Storage temperature Maximum operating junction temperature Thermal resistance junction-case 185W 60V ±20V 14A -65 to 150°C 200°C Max. .95°C/W
ABSOLUTE MAXIMUM RATINGS
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
BVDSS IDSS IGSS VGS(th) gfs Ciss Coss Crss Breakdown voltage, drain source Drain leakage current Gate leakage current Gate threshold voltage Transconductance (300µs pulse) Input capacitance Output capacitance Reverse transfer capacitance
Test Conditions
PER SIDE VGS=0 ID=100mA VDS=28V VGS=0 VGS=20V VDS=0 ID=10mA VDS=VGS VDS=10V ID=1.4A VDS=0 VDS=0 VDS=0 VGS=-0 VGS=0 VGS=0 f=1MHz f=1MHz f=1MHz
Min. Typ. Max.
60 60 60 1 1 5
Unit
Vdc mAdc µAdc Vdc Mhos pF pF pF
1 1.4
84 35 3.5
GPS η VSWR
Common source power gain Drain efficiency Load mismatch tolerance
TOTAL DEVICE PO=55W VDS=28V IDQ=1.4A f=1GHz
10 40 20:1
dB %
DIMENSIONS
C E DM A B C D E F G H I J K M N O P Millimeter 15.24 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.16 1.52 5.08 34.04 1.57R TOL .50 .13 .05 .13 .13 .13 .13 .13 MAX .02 .13 .13 .50 .13 .08 Inches .750 .424 4...
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