FTA10N40

FTP10N40/FTA10N40 400V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS 400V RDS(ON) (Max.) 0.50Ω ID 10A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS Adaptor/Charger LCD Panel Power Switching application Ordering Information Part Number FTP10N40 FTA10N40 Package TO-220 TO-220F Marking FTP10N40 FTA10N40 T C=25℃ Absolute Maximum Ratings Symbol Para VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL TJ and TSTG meter [1] unless otherwise specified FTP10N40 400 10 FTA10N40 10* Unit V A Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Figure Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage Single Pulse Avalanche Energy L=7.2mH, ID=10A Peak Diode Recovery dv/dt[3] Soldering Temperature Distance of 1.6mm from case for 10 seconds Operating and Storage Temperature Range Figure 3 6 125 1.0 ±30 360 m 4.5 300 31 0.25 W W/℃ V J V/ns ℃ -55 to 150 *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FTP06N40 1.0 65 65 FTA06N40 4.0 Unit ℃/W ARK Microelectronics Co., Ltd. www.ark-micro.com 1/11 Rev. 2.0 Mar. 2009 http://www.Datasheet4U.com FTP10N40/FTA1...