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S-AV6

Toshiba Semiconductor

VHF MARINE FM RF POWER AMPLIFIER MODULE

S−AV6 TOSHIBA RF POWER AMPLIFIER MODULE S−AV6 VHF MARINE FM RF POWER AMPLIFIER MODULE Unit: mm l High Gain : Po ≥ 28W, ...


Toshiba Semiconductor

S-AV6

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S−AV6 TOSHIBA RF POWER AMPLIFIER MODULE S−AV6 VHF MARINE FM RF POWER AMPLIFIER MODULE Unit: mm l High Gain : Po ≥ 28W, GP ≥ 21.4dB, ηT ≥ 45% MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC S DC Supply Voltage DC Supply Voltage Input Power Operating Case Temperature Range Storage Temperature Range YMBOL VCC VCON Pi Tc (opr) Tstg RATING 16 V 16 V 300 −30~100 ° −40~110 ° mW C C UNIT ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC S Frequency Range Output Power Power Gain Total Efficiency Input VSWR Harmonics HRM Load Mismatch ― VCC = 15V, VCON = 12.5V Po = 30W (Pi = adjust) VSWR load 20: 1 all phase Tc = −30~80°C VCC = 12.5V, Pi = 200mW Po = 28W (@Tc = 25°C) VCC = 12.5V, Pi = 200mW VCON = 0~12.5V VSWR load 3: 1 all phase YMBOL frange Po GP ηT 45 VSWRin Pi = 200mW VCC = 12.5V, VCON = 12.5V ZG = ZL = 50Ω TEST CONDITION ― JEDEC EIAJ TOSHIBA Weight: 35g MIN 154 28 21.4 — — 5−53P TYP. ― 33 22.2 50 MAX 162 ―W ― ― 2 −25 UNIT MHz dB % ― dB ― ― ― 1.5 −30 No Degradation Power Slump ― ― 0. 8 ― dB Stability ― All spurious output than 60dB below desired signal ― 000707EAA2 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or f ail due to their inherent elec trical s ensitivity an d v ulnerability t o phy sical s tress. It i s the res ponsibility o f the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entir...




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