POWER MOSFET. IRF630 Datasheet

IRF630 MOSFET. Datasheet pdf. Equivalent


TAITRON IRF630
200V/9A POWER MOSFET
(N-Channel)
IRF630/IRFS630
200V/9A Power MOSFET (N-Channel)
General Description
IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with
advanced technology. These power MOSFETs are designed for low voltage,
high speed power switching applications such as switching regulators, converters,
solenoid and relay drivers.
TO-220
IRF630/IRFS630 are available in TO-220/TO-220F packages.
TO-220F
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast switching capability
Ease of Paralleling
Simple Drive Requirements
RoHS Compliance and Halogen free
Application
DC to DC Converter
Adapter
SMPS Application.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITF AX (800)-824-8329 (661)-257-6415
Rev. A/LX
Page 1 of 10
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IRF630 Datasheet
Recommendation IRF630 Datasheet
Part IRF630
Description 200V/9A POWER MOSFET
Feature IRF630; 200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description.
Manufacture TAITRON
Datasheet
Download IRF630 Datasheet




TAITRON IRF630
Ordering Information
Outline
TO-220
TO-220F
200V/9A POWER MOSFET (N-Channel)
IRF630/IRFS630
Part Number
IRF630
IRFS630
Packing Type/Qty’s
Tube/50pcs
Tube/50pcs
Pin Configuration and Symbol
1: GATE 2: DRAIN 3: SOURCE
TO-220 TO-220F
1: GATE 2: DRAIN 3: SOURCE
Absolute Maximum Ratings (TC=25ºC unless otherwise specified, Note)
Symbol
Description
Ratings
VDSS
VGSS
ID
IDM
EAS
EAR
IAR
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
Drain Current -Pulsed (Note1)
Avalanche Energy
Single Pulsed (Note2)
Repetitive (Note1)
Avalanche Current (Note1)
Peak Diode Recovery dv/dt (Note3)
200
± 30
9
36
250
7.4
9
5
www.taitroncomponents.com
Unit
V
V
A
A
mJ
A
V/ns
Rev. A/LX
Page 2 of 10



TAITRON IRF630
200V/9A POWER MOSFET (N-Channel)
IRF630/IRFS630
Symbol
PD
RθJA
RθJC
TJ
TSTG
TL
Description
Power Dissipation
TO-220
TO-220F
Derate above 25°C
Thermal Resistance
(Junction-to-Ambient)
Thermal Resistance
(Junction-to-Case)
TO-220 0.58
TO-220F 0.3
TO-220/TO-220F
TO-220
TO-220F 3.3
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temperature for soldering purposes,1/8” from
case for 10 seconds
Ratings
74
38
62
1.71
-55 to +150
-55 to +150
300 °
Unit
W
W/°C
°C/ W
°C/ W
°C
°C
C
Note: Absolute maximum ratings indicate limits beyond which damage to the device may occur.
For guarantee specifications and test conditions, see the Electrical Characteristics.
The guaranteed specifications apply only for the test conditions listed.
Electrical Characteristics (TC=25ºC unless otherwise specified)
Symbol
Description
Min. Typ. Max.
OFF CHARACTERISTICS
V(BR)DSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
200 -
--
--
-
1
50
IGSS
Gate-Source
Leakage Current
Forward
Reverse -
ON CHARACTERISTICS
VGS(th) Gate-Source Threshold Voltage
RDS(ON)
Static Drain-Source On-State
Resistance (Note 4)
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
- - 100
- -100
2.0 - 4.0
- - 0.4
3.8 -
-
- 800 -
- 240 -
- 76 -
Unit
V
μA
nA
V
S
pF
Conditions
VGS=0V, ID=250µA
VDS=200V, VGS=0V
VDS=160V, VGS=0V,
TJ=125° C
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VDS=VGS, ID=250uA
VGS=10V, ID=5.4A
VDS=50V, ID=5.4A
VDS=25V, VGS=0V,
f=1.0MHz
www.taitroncomponents.com
Rev. A/LX
Page 3 of 10







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