DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD MGBR30U60C
Preliminary DIODE
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGB...
Description
UNISONIC TECHNOLOGIES CO., LTD MGBR30U60C
Preliminary DIODE
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR30U60C is a dual m os gated barrier rectifiers, it uses UT C’s a dvanced tec hnology t o pr ovide custom ers with lo w forward voltage drop and high switching speed, etc.
FEATURES
* Ultra low forward voltage drop * High switching speed
SYMBOL
ORDERING INFORMATION
Package TO-220 Pin Assignment 12 3 A K A Packing Tube
Ordering Number Lead Free Halogen Free MGBR30U60CL-TA3-T MGBR30U60CG-TA3-T Note: Pin Assignment: A: Anode, K: Cathode
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-111.a
http://www.Datasheet4U.com
MGBR30U60C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 60 V Working Peak Reverse Voltage VRWM 60 V Peak Repetitive Reverse Voltage VRRM 60 V Per Leg 15 A Average Rectified Output Current Per Device IO 30 A Total Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 300 A Single Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not impl...
Similar Datasheet