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MGBR30V50C

UNISONIC TECHNOLOGIES

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR30V50C DUAL MOS GATED BARRIER RECTIFIERS  DESCRIPTION DIODE The U TC MGBR30V50C is...


UNISONIC TECHNOLOGIES

MGBR30V50C

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR30V50C DUAL MOS GATED BARRIER RECTIFIERS  DESCRIPTION DIODE The U TC MGBR30V50C is a du al mos gated barri er rect ifiers, it uses UT C’s advanc ed tech nology to pro vide custom ers with lo w forward voltage drop and high switching speed, etc.  FEATURES * Very low forward voltage drop * High switching speed  SYMBOL  ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 A K A Packing Tube Ordering Number Lead Free Halogen Free MGBR30V50CL-TA3-T MGBR30V50CG-TA3-T Note: Pin Assignment: A: Anode, K: Cathode  MARKING INFORMATION www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-134.C http://www.Datasheet4U.com MGBR30V50C  ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) DIODE Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. UNIT PARAMETER SYMBOL RATINGS DC Blocking Voltage VRM 50 V Working Peak Reverse Voltage VRWM 50 V Peak Repetitive Reverse Voltage VRRM 50 V Per Leg 15 A Average Rectified Output Current Per Device IO Total 3 0 A Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 250 A Single Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not im...




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