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MGBR40L60C

UNISONIC TECHNOLOGIES

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR40L60C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The U TC MG...



MGBR40L60C

UNISONIC TECHNOLOGIES


Octopart Stock #: O-805860

Findchips Stock #: 805860-F

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR40L60C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The U TC MGBR40L60C is a dua l mos g ated barri er rect ifiers, it uses UT C’s advanc ed tech nology to pro vide custom ers with lo w forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL  ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 A K A Packing Tube Ordering Number Lead Free Halogen Free MGBR40L60CL-TA3-T MGBR40L60CG-TA3-T Note: Pin Assignment: A: Anode, K: Cathode www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-172.a http://www.Datasheet4U.com MGBR40L60C  Preliminary DIODE ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 60 V Working Peak Reverse Voltage VRWM 60 V Peak Repetitive Reverse Voltage VRRM 60 V Per Leg 20 A Average Rectified Output Current Per Device IO Total 4 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM 280 A Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not impli...




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