N-Channel Logic Level Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C739E3 Issued Date : 2009.10...
Description
CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 1/6
MTN6515E3
Features
Low Gate Charge Simple Drive Requirement Pb-free lead plating
BVDSS ID RDSON(MAX)
150V 20A 65mΩ
Equivalent Circuit
MTN6515E3
Outline
TO-220
G:Gate D:Drain S:Source G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol VDS VGS ID ID IDM IAS EAS EAR PD Tj, Tstg
Limits 150 ±16 20 15 80 20 5 2.5 110 55 -55~+175
Unit V
A
mJ W °C
*2. Duty cycle ≤ 1%
MTTN6515E3 CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a
Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 2/6
Value 1.36 62.5
Unit °C/W °C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON)
*1 *1
Min. 150 0.45 20 -
Typ. 0.75 40 50 60 25 107 ...
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