MTN6515E3

CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 1/6 MTN6515E3 Features Low Gate Charge Simple Drive Requirement Pb-free lead plating BVDSS ID RDSON(MAX) 150V 20A 65mΩ Equivalent Circuit MTN6515E3 Outline TO-220 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol VDS VGS ID ID IDM IAS EAS EAR PD Tj, Tstg Limits 150 ±16 20 15 80 20 5 2.5 110 55 -55~+175 Unit V A mJ W °C *2. Duty cycle ≤ 1% MTTN6515E3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 2/6 Value 1.36 62.5 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) *1 *1 Min. 150 0.45 20 - Typ. 0.75 40 50 60 25 107 ...