MTN7451J3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C841J3 Issued Date : 2012.05.04 Revised Date : 2013.12.30 Page No. : 1/ 9 MTN7451J3 Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Pb-free lead plating and halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=6V, ID=2A 150V 24A 54mΩ(typ) 57mΩ(typ) Symbol MTN7451J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTN7451J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN7451J3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Spec. No. : C841J3 Issued Date : 2012.05.04 Revised Date : 2013.12.30 Page No. : 2/ 9 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.3mH, ID=24A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation @ TC=25℃ Total Power Dissipation @ TC=100℃ Operating Junction and Storage Temperature R...