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MTNK5C3 Dataheets PDF



Part Number MTNK5C3
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description ESD protected N-Channel MOSFET
Datasheet MTNK5C3 DatasheetMTNK5C3 Datasheet (PDF)

CYStech Electronics Corp. ESD protected N-Channel Enhancement Mode MOSFET Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 1/8 MTNK5C3 Description BVDSS ID RDSON(MAX) 30V 100mA 8Ω • Low voltage drive(2.5V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead plating & halogen-free package Symbol MTNK5C3 Outline SOT-523 D G G:Gate S:Source D:Drain G S S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-.

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CYStech Electronics Corp. ESD protected N-Channel Enhancement Mode MOSFET Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 1/8 MTNK5C3 Description BVDSS ID RDSON(MAX) 30V 100mA 8Ω • Low voltage drive(2.5V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead plating & halogen-free package Symbol MTNK5C3 Outline SOT-523 D G G:Gate S:Source D:Drain G S S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Continuous Pulsed Continuous Pulsed Symbol BVDSS VGS ID IDP IDR IDRP PD Tj ; Tstg Rth,ja Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1% *2. With each pin mounted on the recommended lands. *3. Human body model, 1.5kΩ in series with 100pF Limits 30 ±20 ±100 ±200 ±100 ±200 150 750 -55~+150 833 *1 *1 *2 *3 Unit V V mA mA mA mA mW V °C °C/W MTNK5C3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 30 0.8 20 Typ. 1.3 3.4 6.9 50 12.5 7.3 3.5 15 35 75 75 0.88 Max. 1.5 ±1 100 8 13 1.2 Unit V V μA nA Ω mS Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 2/8 Test Conditions VGS=0, ID=100μA VDS=3V, ID=100μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VGS=4V, ID=10mA VGS=2.5V, ID=1mA VDS=3V, ID=10mA GFS Dynamic Ciss Coss Crss td(on) tr td(off) tf Source-Drain Diode *VSD - pF VDS=5V, VGS=0, f=1MHz VDD≒5V, ID=10mA, VGS=5V, RL=500Ω, RG=10Ω ns V VGS=0V, IS=100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTNK5C3 Package SOT-523 (Pb-free lead plating & halogen-free package) Shipping 3000 pcs / Tape & Reel Marking KN MTNK5C3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics Typical Output Characteristics 0.15 Gate Threshold Voltage---VGS(th)(V) 4V 3.5V 3V TA=25°C Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 3/8 Gate Threshold Voltage vs Channel Temperature 2 Drain Current --- I D(A) 1.5 0.1 2.5V 1 0.05 2V VGS=1.5V 0.5 0 01 2 3 Drain-Source Voltage ---VDS(V) 4 0 -50 -25 0 25 50 75 100 Channel Temperature---Tch(°C) 125 150 Typical Transfer Characteristics 200 25°C VDS=3V 75°C Static Drain-Source On-state Resistance with Temperature 5 VGS=4V Static Drain-Source On-state Resistance(Ω) Drain Current ---I D(mA) 150 125°C 4 ID=100mA 100 3 ID=50mA 50 0 0 1 234 Gate-Source Voltage---V GS(V) 2 -50 -25 0 25 50 75 100 125 150 Channel Temperature---Tch(°C) Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State Resistance--RDS(on)(Ω) Static Drain-Source On-State Resistance--RDS(on) (Ω) Static Drain-Source On-State resistance vs Drain Current 10 9 8 7 6 5 4 3 2 1 1 10 100 Drain Current---I D(mA) 1000 VGS=4V VGS=2.5V TA=25°C 10 9 8 7 6 5 4 3 2 1 1 10 100 Drain Current---I D(mA) 1000 VGS=4V VGS=2.5V TA=125°C MTNK5C3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics(Cont.) Static Drain-Source On-State Resistance vs Drain Current Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 4/8 Static Drain-Source On-State Resistance vs Drain Current 10 100 Static Drain-Source On-State ResistanceRDS(ON) (Ω) VGS=2.5V Ta=25°C Ta=75°C Static Drain-Source On-State ResistanceRDS(ON) (Ω) VGS=4V Ta=25°C 10 Ta=75°C Ta=125°C Ta=125°C 1 1 10 100 Drain Current---I D(mA) 1000 1 1 10 100 Drain Current---ID(mA) 1000 Static Drain-Source On-State Resistance vs Gate-Source Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 10 9 Static Drain-Source On-State Resistance---RDS(ON) (Ω) 10 9 Static Drain-Source On-State Resistance---RDS(ON) (Ω) ID=50mA 8 7 6 5 4 3 2 1 0 02468 TA=25°C TA=75°C 8 7 6 5 4 3 2 1 0 TA=25°C TA=75°C ID=100mA TA=125°C TA=125°C 10 Gate-Source Voltage---VGS(V) 02 4 68 Gate-Source Voltage---V GS(V) 10 Reverse Drain Current vs Source-Drain Voltage(I) 1000 Reverse Drain Current-I DR(mA) Reverse Drain Current-I DR(mA) 1000 Reverse Drain Current vs Source-Drain Voltage(II) 100 TA=125°C 100 VGS=4V 10 TA=25°C 10 VGS=0V TA=75°C 1 1 0.1 00 .5 1 Source-Drain Voltage-VSD(V) 1.5 0.1 00 .511 Source-Drain Voltage-VSD(V) .5 MTNK5C3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 5/8 Foreward Transfer Admittance vs Drain Current Forward Transfer Admittance--YFS(mS) VDS=3V Ta=25°C 100 Ta=75°C 10 Ta=125°C Capacitance---(pF) Ciss 10 C oss Crss 1 0 10 20 Drain-Source Voltage---VDS(V) 30 1 1 10 100 Drain Current---ID(mA) 1000 MTNK5C3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C800C3 Issue.


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