Document
CYStech Electronics Corp.
ESD protected N-Channel Enhancement Mode MOSFET
Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 1/8
MTNK5C3
Description
BVDSS ID RDSON(MAX)
30V 100mA 8Ω
• Low voltage drive(2.5V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead plating & halogen-free package
Symbol
MTNK5C3
Outline
SOT-523 D G
G:Gate S:Source D:Drain
G S
S
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current
Continuous Pulsed Continuous Pulsed
Symbol BVDSS
VGS ID IDP IDR IDRP PD Tj ; Tstg Rth,ja
Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1% *2. With each pin mounted on the recommended lands. *3. Human body model, 1.5kΩ in series with 100pF
Limits 30 ±20 ±100 ±200 ±100 ±200 150 750 -55~+150 833
*1 *1 *2 *3
Unit V V mA mA mA mA mW V °C °C/W
MTNK5C3
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 30 0.8 20 Typ. 1.3 3.4 6.9 50 12.5 7.3 3.5 15 35 75 75 0.88 Max. 1.5 ±1 100 8 13 1.2 Unit V V μA nA Ω mS
Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 2/8
Test Conditions VGS=0, ID=100μA VDS=3V, ID=100μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VGS=4V, ID=10mA VGS=2.5V, ID=1mA VDS=3V, ID=10mA
GFS Dynamic Ciss Coss Crss td(on) tr td(off) tf Source-Drain Diode *VSD -
pF
VDS=5V, VGS=0, f=1MHz VDD≒5V, ID=10mA, VGS=5V, RL=500Ω, RG=10Ω
ns
V
VGS=0V, IS=100mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device MTNK5C3 Package SOT-523 (Pb-free lead plating & halogen-free package) Shipping 3000 pcs / Tape & Reel Marking KN
MTNK5C3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
0.15
Gate Threshold Voltage---VGS(th)(V) 4V 3.5V 3V TA=25°C
Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 3/8
Gate Threshold Voltage vs Channel Temperature
2
Drain Current --- I D(A)
1.5
0.1
2.5V
1
0.05
2V VGS=1.5V
0.5
0 01 2 3 Drain-Source Voltage ---VDS(V) 4
0 -50 -25 0 25 50 75 100 Channel Temperature---Tch(°C) 125 150
Typical Transfer Characteristics
200
25°C VDS=3V 75°C
Static Drain-Source On-state Resistance with Temperature
5
VGS=4V Static Drain-Source On-state Resistance(Ω)
Drain Current ---I D(mA)
150
125°C
4
ID=100mA
100
3
ID=50mA
50
0 0 1 234 Gate-Source Voltage---V GS(V)
2 -50 -25 0 25 50 75 100 125 150
Channel Temperature---Tch(°C)
Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State Resistance--RDS(on)(Ω) Static Drain-Source On-State Resistance--RDS(on) (Ω)
Static Drain-Source On-State resistance vs Drain Current
10 9 8 7 6 5 4 3 2 1 1 10 100 Drain Current---I D(mA) 1000
VGS=4V VGS=2.5V TA=25°C
10 9 8 7 6 5 4 3 2 1 1 10 100 Drain Current---I D(mA) 1000
VGS=4V VGS=2.5V TA=125°C
MTNK5C3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Static Drain-Source On-State Resistance vs Drain Current
Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 4/8
Static Drain-Source On-State Resistance vs Drain Current 10
100
Static Drain-Source On-State ResistanceRDS(ON) (Ω) VGS=2.5V Ta=25°C Ta=75°C
Static Drain-Source On-State ResistanceRDS(ON) (Ω)
VGS=4V Ta=25°C
10
Ta=75°C
Ta=125°C
Ta=125°C
1 1 10 100 Drain Current---I D(mA) 1000
1 1 10 100 Drain Current---ID(mA) 1000
Static Drain-Source On-State Resistance vs Gate-Source Voltage
Static Drain-Source On-State Resistance vs Gate-Source Voltage
10 9
Static Drain-Source On-State Resistance---RDS(ON) (Ω)
10 9
Static Drain-Source On-State Resistance---RDS(ON) (Ω)
ID=50mA
8 7 6 5 4 3 2 1 0 02468
TA=25°C TA=75°C
8 7 6 5 4 3 2 1 0
TA=25°C TA=75°C
ID=100mA
TA=125°C
TA=125°C
10 Gate-Source Voltage---VGS(V)
02
4 68 Gate-Source Voltage---V GS(V)
10
Reverse Drain Current vs Source-Drain Voltage(I) 1000 Reverse Drain Current-I DR(mA) Reverse Drain Current-I DR(mA) 1000
Reverse Drain Current vs Source-Drain Voltage(II)
100
TA=125°C
100
VGS=4V
10
TA=25°C
10
VGS=0V
TA=75°C
1
1
0.1 00 .5 1 Source-Drain Voltage-VSD(V) 1.5
0.1 00 .511 Source-Drain Voltage-VSD(V) .5
MTNK5C3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
100
1000
Spec. No. : C800C3 Issued Date : 2011.01.19 Revised Date : Page No. : 5/8
Foreward Transfer Admittance vs Drain Current
Forward Transfer Admittance--YFS(mS)
VDS=3V Ta=25°C 100 Ta=75°C 10 Ta=125°C
Capacitance---(pF)
Ciss
10
C oss
Crss
1 0 10 20 Drain-Source Voltage---VDS(V) 30
1 1 10 100 Drain Current---ID(mA) 1000
MTNK5C3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C800C3 Issue.