MTNK5S3

CYStech Electronics Corp. ESD protected N-Channel Enhancement Mode MOSFET Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 1/8 MTNK5S3 Description BVDSS ID RDSON(MAX) 30V 100mA 8Ω Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & halogen-free package Symbol MTNK5S3 Outline SOT-323 D G G：Gate S：Source D：Drain G S S Ordering Information Device MTNK5S3-0-T1-G Package SOT-323 (Pb-free lead plating & halogen-free package) Shipping 3000 pcs / Tape & Reel MTNK5S3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Continuous Pulsed Continuous Pulsed Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 2/8 Symbol BVDSS VGS ID IDP IDR IDRP PD Tj ; Tstg Rth,ja Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1% *2. With each pin mounted on the recommended lands. *3. Human body model, 1.5kΩ in series with 100pF Limits 30 ±20 ±100 ±200 ±100 ±200 200 750 -55~+150 556 *1 *1 *2 *3 Unit V V mA mA mA mA mW V °C °C/W Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 30 0.8 20 Typ. 1.3 3.4 6.9 50 12.5 7.3 ...