MTNN8451KQ8

CYStech Electronics Corp. Asymmetric Dual N-Channel Enhancement Mode MOSFET Spec. No. : C558Q8 Issued Date : 2012.04.28 Revised Date : 2012.04.30 Page No. : 1/12 MTNN8451KQ8 Description BVDSS ID RDSON(TYP.)@VGS=10V RDSON(TYP.)@VGS=4.5V FET1 30V 6.8A 15mΩ 23mΩ FET 2 30V 10.2A 11mΩ 18mΩ The MTNN8451KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTNN8451KQ8 Outline SOP-8 G：Gate S：Source D：Drain MTNN8451KQ8 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 2) Spec. No. : C558Q8 Issued Date : 2012.04.28 Revised Date : 2012.04.30 Page No. : 2/12 Symbol BVDSS VGS Limits FET 1 30 ±20 6.8 5.4 30 1.2 (Note 2) 0.7 (Note 3) -55~+150 FET 2 30 ±20 10.2 8.1 40 2 (Note 2) 1.1 (Note 3) Unit V TA=25 °C, VGS=10V TA=70 °C, VGS=10V ID IDM PD Tj; Tstg A Pulsed Drain Current (Note 1) Power Dissipation Operating Junct...