MTP1013C3

CYStech Electronics Corp. Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2018.10.24 Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET MTP1013C3 BVDSS ID@ TA=25C, VGS=-4.5V RDSON@VGS=-4.5V, ID=-500mA RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-10mA -20V -500mA 0.63Ω(typ) 1.1Ω(typ) 1.7Ω(typ) Features Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V. Compact industrial standard SOT-523 surface mount package. ESD protected gate Pb-free lead plating and halogen-free package. Equivalent Circuit MTP1013C3 Outline SOT-523 D G：Gate S：Source D：Drain S G Ordering Information Device MTP1013C3-0-T1-G Package SOT-523 (Pb-free lead plating package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTP1013C3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Tj=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25C, VGS=-4.5V Continuous Drain Current @ TA=70C, VGS=-4.5V Pulsed Drain Current *1 Maximum Power Dissipation @ TA=25℃ Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Rth,ja Tj, Tstg Note : 1. Pulse width≤ 10μs, duty cycle≤2%. 2. When mounted on FR...