MTP1406M3

CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode MOSFET Spec. No. : C733M3 Issued Date : 2011.05.16 Revised Date : 2013.08.12 Page No. : 1/5 MTP1406M3 Features Single Drive Requirement Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A Ultra High Speed Switching Pb-free lead plated package BVDSS ID RDSON(MAX) -60V -4A 90.8mΩ Symbol MTP1406M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle≤1% VDS VGS ID ID IDM Pd Tj, Tstg -60 ±20 -4 -2.4 -16 1.67 0.83 -55~+175 V A W °C MTP1406M3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-a Spec. No. : C733M3 Issued Date : 2011.05.16 Revised Date : 2013.08.12 Page No. : 2/5 Value 90* * Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) *1 *1 Min. -60 -1 -4 - Typ. -1.8 82 120 9 1980 665 645 6.8 8 12 20 12 16.2 2 3.5 12 9 Max. -3 ±100 -1 -25 ...