DatasheetsPDF.com

MTP2071M3 Dataheets PDF



Part Number MTP2071M3
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description 20V P-CHANNEL Enhancement Mode MOSFET
Datasheet MTP2071M3 DatasheetMTP2071M3 Datasheet (PDF)

CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 1/8 MTP2071M3 Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A -20V -5A 52mΩ (typ.) 66mΩ (typ.) 80mΩ (typ.) Symbol MTP2071M3 Outline SOT-89 G:Gate S:Source D:Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limit.

  MTP2071M3   MTP2071M3



Document
CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 1/8 MTP2071M3 Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A -20V -5A 52mΩ (typ.) 66mΩ (typ.) 80mΩ (typ.) Symbol MTP2071M3 Outline SOT-89 G:Gate S:Source D:Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature VDS VGS ID ID IDM PD Tj, Tstg -20 ±12 -5 -4 -20 *1, 3 2 *2 1.3 *2 -55~+150 V V A A A W °C *2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2% MTP2071M3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Note : Surface mounted on 1 in² copper pad of FR-4 board. Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 2/8 Symbol Rth,ja Limit 62.5 Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr Min. -20 -0.5 Typ. -0.65 8.4 52 66 80 1121 76 67 7 9 33 38 8 2 3 -0.8 15 8 Max. -1.0 ±100 -1 -25 70 85 110 -1.3 Unit V V S nA μA μA mΩ Test Conditions VGS=0, ID=-250μA VDS=VGS, ID=-250μA VDS=-5V, ID=-3A VGS=±12V, VDS=0 VDS=-20V, VGS=0 VDS=-16V, VGS=0 (Tj=70°C) ID=-4.2A, VGS=-4.5V ID=-2A, VGS=-2.5V ID=-1A, VGS=-1.8V pF VDS=-10V, VGS=0, f=1MHz VDS=-10V, ID=-1A, VGS=-4.5V RG=6Ω ns nC VDS=-10V, ID=-4A, VGS=-4.5V V ns nC VGS=0V, IS=-1.7A IS=-4A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTP2071M3 Package SOT-89 (Pb-free) Shipping 1000 pcs / Tape & Reel Marking 2071 MTP2071M3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics Typical Output Characteristics 10V 9V 8V 7V 6V 5V 4.5V 4V 3.5V 3V Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 3/8 Brekdown Voltage vs Ambient Temperature -BVDSS, Drain-Source Breakdown Voltage (V) 20 38 36 34 32 30 28 ID=-250μA, VGS=0V -ID, Drain Current (A) 15 -VGS=2.5V 10 5 -VGS=1.8V -VGS=1.5V 0 012 345 -VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.4 -VSD, Source-Drain Voltage(V) 1.2 1 0.8 0.6 0.4 0.2 Tj=150°C VGS=0V Tj=25°C 1000 R DS(on) , Static Drain-Source On-Sta.


MTP2010J3 MTP2071M3 MTP2301V3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)