Document
CYStech Electronics Corp.
20V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 1/8
MTP2071M3
Features
• Single Drive Requirement • Ultra High Speed Switching • Pb-free package
BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A
-20V -5A 52mΩ (typ.) 66mΩ (typ.) 80mΩ (typ.)
Symbol
MTP2071M3
Outline
SOT-89
G:Gate S:Source D:Drain
G D D S
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature
VDS VGS ID ID IDM PD Tj, Tstg
-20 ±12 -5 -4 -20 *1, 3 2 *2 1.3 *2 -55~+150
V V A A A W °C
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2%
MTP2071M3
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient
Note : Surface mounted on 1 in² copper pad of FR-4 board.
Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 2/8
Symbol Rth,ja
Limit 62.5
Unit °C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr Min. -20 -0.5 Typ. -0.65 8.4 52 66 80 1121 76 67 7 9 33 38 8 2 3 -0.8 15 8 Max. -1.0 ±100 -1 -25 70 85 110 -1.3 Unit V V S nA μA μA mΩ Test Conditions VGS=0, ID=-250μA VDS=VGS, ID=-250μA VDS=-5V, ID=-3A VGS=±12V, VDS=0 VDS=-20V, VGS=0 VDS=-16V, VGS=0 (Tj=70°C) ID=-4.2A, VGS=-4.5V ID=-2A, VGS=-2.5V ID=-1A, VGS=-1.8V
pF
VDS=-10V, VGS=0, f=1MHz VDS=-10V, ID=-1A, VGS=-4.5V RG=6Ω
ns
nC
VDS=-10V, ID=-4A, VGS=-4.5V
V ns nC
VGS=0V, IS=-1.7A IS=-4A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device MTP2071M3 Package SOT-89 (Pb-free) Shipping 1000 pcs / Tape & Reel Marking 2071
MTP2071M3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
10V 9V 8V 7V 6V 5V 4.5V 4V 3.5V 3V
Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 3/8
Brekdown Voltage vs Ambient Temperature
-BVDSS, Drain-Source Breakdown Voltage (V)
20
38 36 34 32 30 28
ID=-250μA, VGS=0V
-ID, Drain Current (A)
15
-VGS=2.5V
10
5
-VGS=1.8V -VGS=1.5V
0 012 345 -VDS, Drain-Source Voltage(V)
-75 -50 -25
0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage 1.4 -VSD, Source-Drain Voltage(V) 1.2 1 0.8 0.6 0.4 0.2
Tj=150°C VGS=0V Tj=25°C
1000 R DS(on) , Static Drain-Source On-Sta.