N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
10N70T
Preliminary
10A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N70T is a...
Description
UNISONIC TECHNOLOGIES CO., LTD
10N70T
Preliminary
10A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N70T is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 1.2Ω @ VGS = 10V, ID = 5A * Fast switching * 100% avalanche tested * Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N70TL-TF3-T
10N70TG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F
Pin Assignment 123 GDS
Packing Tube
MARKING
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QW-R502-877.b
10N70T
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
700 V ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR ID IDM EAS EAR dv/dt
10 A 10 A 40 A 55 mJ 15.6 mJ 4.5 V/ns
Power Dissipation Junction Temperature
PD 50 W
TJ
+150
°C
Operating Temperature Storage Temperature
TOPR TSTG
-55 ~ +150...
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