10N70Z

UNISONIC TECHNOLOGIES CO., LTD 10N70Z 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UT C 10N70Z is a high voltage and high curr ent po wer MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and have a high ru gged avala nche ch aracteristics. T his po wer M OSFET is usually used at high speed switching applications in power supplies, PWM motor co ntrols, high effi cient DC to DC converters a nd bridge circuits.  FEATURES * RDS(ON) =1.2Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL  OR DERING INFORMATION Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 10N70ZL-TF1-T 10N70ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-935, A http://www.Datasheet4U.com 10N70Z  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Power MOSFET UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 10 A Continuous I A D 10 Drain Current Pulsed (Note 2) IDM 40 A Single Pulsed (Note 3) EAS 250 mJ Avalanche Energy Repetitive (Note 2) EAR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation W PD 50 Junction Temperature TJ + 150 °C Operating Temperature TO...