2SC5198B

SEMICONDUCTOR 2SC5198B Series Silicon NPN triple diffusion planar transistor 10A/140V/100W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES High breakdown voltage, V CEO =140V (min) Complementary to 2SA1941B TO-3P package which can be installed to the heat sink with one screw 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 C APPLICATIONS Suitable for use in 70W high fidelity audio amplifier’s output stage 1 2 3 B E NPN All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current t p ≤ 5 ms PARAMETER VALUE 140 140 5 20 10 1 T C = 25 °C 100 150 UNIT V Collector current Base current Collector power dissipation Junction temperature Storage temperature A W ºC -55 to 150 THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case VALUE 1.55 UNIT ºC/W http://www.Datasheet4U.com www.nellsemi.com Page 1 of 3 SEMICONDUCTOR 2SC5198B Series RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) VALUE SYMBOL PARAMETER Collector cutoff current Emitter cutoff current CONDITIONS MIN. ICBO I EBO V (BR)CEO V CBO V EBO V CBO = 140V, l E = 0 V EBO = 5V, l C = 0 140 140 5 Rank-R h FE 1 Forward current transfer ratio (DC current gain) h FE...