SMK1265F

SMK1265F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=650V(Min.)  Low Crss : Crss=14.6pF(Typ.)  Low gate charge : Qg=41nC(Typ.)  Low RDS(on) : RDS(on)=0.8Ω(Max.) Ordering Information Type No. Marking Package Code SMK1265F SMK1265 TO-220F-3L PIN Connection GDS G TO-220F-3L Marking Diagram AAUUKK SMGΔKYYM1M2D6DD5D SDB20D45 Column 1 : Manufacturer Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code D S Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage VDSS Gate-source voltage Drain current (DC) * Drain current (Pulsed) * VGSS ID TC=25℃ TC=100℃ IDM Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy ② ② ① ① PD IAS EAS IAR EAR Junction temperature TJ Storage temperature range Tstg * Limited by maximum junction temperature Rating 650 30 12 4.5 48 45 12 140 12 7.6 150 -55~150 Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 2.7 62.5 Unit V V A A A W A mJ A mJ C Unit ℃/W KSD-T0O039-003 1 SMK1265F Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Drain-source breakdown voltage BVDSS ID=250uA, VGS=0V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS Drain-source cut-...