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4N60Z Dataheets PDF



Part Number 4N60Z
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description 40A 600V N-CHANNEL POWER MOSFET
Datasheet 4N60Z Datasheet4N60Z Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) <.

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UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness 11 TO-251 TO-220F 1 TO-220F1 1 TO-251S 1 TO-252  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N60ZL-TF3-T 4N60ZG-TF3-T 4N60ZL-TF1-T 4N60ZG-TF1-T 4N60ZL-TM3-T 4N60ZG-TM3-T 4N60ZL-TMS-T 4N60ZG-TMS-T 4N60ZL-TN3-R 4N60ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F1 TO-251 TO-251S TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel 4N60ZG-TF3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube, R: Tape Reel (2) TF3: TO-220F, TF1: TO-220F1, TM3: TO-251, TMS: TO-251S, TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-777.D 4N60Z  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-777.D 4N60Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS IAR ±20 4.4 V A Drain Current Continuous Pulsed (Note 2) ID IDM 4.0 16 A A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 260 10.6 mJ mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 36 Power Dissipation TO-251/TO-251S TO-252 PD 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient PACKAGE TO-220F/TO-220F1 TO-251/TO-251S TO-252 TO-220F/TO-220F1 TO-251/TO-251S TO-252 SYMBOL θJA RATINGS 62.5 110 3.47 2.5 UNIT °С/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 9 QW-R502-777.D 4N60Z Power MOSFET  ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Gate-Source Leakage Current Forward Reverse IGSS VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 5 μA -5 μA 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A 2.2 2.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz 520 670 70 90 8 11 pF pF pF SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tR tD(OFF) tF QG QGS QGD VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) VDS= 480V,ID= 4.0A, VGS= 10V (Note 1, 2) 13 35 ns 45 100 ns 25 60 ns 35 80 ns 15 20 nC 3.4 nC 7.1 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD Maximum Continuous Drain-Source Diode Forward Current IS VGS = 0V, IS = 4.4A 1.4 V 4.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A Reverse Recovery Time trr Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) 250 ns 1.5 μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 9 QW-R502-777.D 4N60Z  TEST CIRCUITS AND WAVEFORMS D.U.T. + - + VDS - L Power MOSFET RG VGS Same Type as D.U.T. Driver * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, .


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