Document
UNISONIC TECHNOLOGIES CO., LTD
4N60Z
Power MOSFET
4A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
11
TO-251
TO-220F
1 TO-220F1
1 TO-251S
1 TO-252
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60ZL-TF3-T
4N60ZG-TF3-T
4N60ZL-TF1-T
4N60ZG-TF1-T
4N60ZL-TM3-T
4N60ZG-TM3-T
4N60ZL-TMS-T
4N60ZG-TMS-T
4N60ZL-TN3-R
4N60ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F TO-220F1
TO-251 TO-251S TO-252
Pin Assignment 123 GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tape Reel
4N60ZG-TF3-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube, R: Tape Reel (2) TF3: TO-220F, TF1: TO-220F1, TM3: TO-251,
TMS: TO-251S, TN3: TO-252
(3) G: Halogen Free and Lead Free, L: Lead Free
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-777.D
4N60Z
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-777.D
4N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage Avalanche Current (Note 2)
VGSS IAR
±20 4.4
V A
Drain Current
Continuous Pulsed (Note 2)
ID IDM
4.0 16
A A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
EAS EAR
260 10.6
mJ mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
36
Power Dissipation
TO-251/TO-251S TO-252
PD
50
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER Junction to Ambient
PACKAGE TO-220F/TO-220F1 TO-251/TO-251S TO-252 TO-220F/TO-220F1 TO-251/TO-251S TO-252
SYMBOL θJA
RATINGS 62.5
110
3.47
2.5
UNIT °С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-777.D
4N60Z
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS VDS = 600V, VGS = 0V
10 μA
Gate-Source Leakage Current
Forward Reverse
IGSS
VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
5 μA -5 μA 0.6 V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
2.2 2.5 Ω
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VDS = 25V, VGS = 0V, f = 1MHz
520 670 70 90 8 11
pF pF pF
SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tR
tD(OFF) tF QG
QGS QGD
VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2)
VDS= 480V,ID= 4.0A, VGS= 10V (Note 1, 2)
13 35 ns 45 100 ns 25 60 ns 35 80 ns 15 20 nC 3.4 nC 7.1 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
Maximum Continuous Drain-Source Diode Forward Current
IS
VGS = 0V, IS = 4.4A
1.4 V 4.4 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM
17.6 A
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1)
250 ns 1.5 μC
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www.unisonic.com.tw
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QW-R502-777.D
4N60Z
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+ -
+ VDS -
L
Power MOSFET
RG
VGS
Same Type as D.U.T.
Driver
* dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test
VDD
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, .