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7N20Z Dataheets PDF



Part Number 7N20Z
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description 7A 200V N-CHANNEL POWER MOSFET
Datasheet 7N20Z Datasheet7N20Z Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 7N20Z 7A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UT C 7N20Z is an N-Chan nel en hancement mode po wer MOSFET providing c ustomers with e xcellent s witching p erformance and mi nimum on-state res istance. T his de vice can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N20Z is gen erally applied in low voltage applications, such as DC motor controls , audio amplifi ers and high efficiency switching DC/DC c.

  7N20Z   7N20Z


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UNISONIC TECHNOLOGIES CO., LTD 7N20Z 7A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UT C 7N20Z is an N-Chan nel en hancement mode po wer MOSFET providing c ustomers with e xcellent s witching p erformance and mi nimum on-state res istance. T his de vice can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N20Z is gen erally applied in low voltage applications, such as DC motor controls , audio amplifi ers and high efficiency switching DC/DC converters. „ FEATURES * Low Gate Charge: 5.8nC (TYP.) * Low CRSS: 10 pF (TYP.) * RDS(ON) = 0.58Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability „ SYMBOL „ ORDERING INFORMATION Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube Ordering Number Lead Free Halogen Free 7N20ZL-TN3-R 7N20ZG-TN3-R 7N20ZL-TN3-T 7N20ZG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-810.A http://www.Datasheet4U.com 7N20Z „ ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current TC =25°C I A D 7 Pulsed Drain Current (Note 2) IDM 28 A Single Pulsed Avalanche Energy (Note 3) EAS 130 mJ Power Dissipation PD 2.5 W Operating Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L =26mH, IAS =7A, VDD =25V, RG =25Ω Starting TJ =25°C „ THERMAL DATA UNIT °C/W PARAMETER SYMBOL RATINGS Junction to Ambient θJA 50 Note: When mounted on the minimum pad size recommended (PCB Mount) „ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) MIN TYP MAX UNIT 200 1 ±10 4.0 0.58 0.69 190 60 10 5.8 1.4 2.5 7 24 13 19 25 60 35 50 7 28 1.5 250 75 13 7.5 V µA µA V Ω pF pF pF nC nC nC ns ns ns ns A A V PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250µA Drain-Source Leakage Current IDSS V DS =200V, VGS =0V Gate-Source Leakage Current IGSS V GS =±25V, VDS =0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID =250µA 2.0 Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =3.5A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS =25V, VGS=0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=100V, ID=7A Gate Source Charge QGS (Note 1,2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=50V, ID=7A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD I S =7A, VGS =0V Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-810.A 7N20Z „ TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms Power MOSFET DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-810.A 7N20Z „ TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms VDS RG ID BVDSS L IAS 2 EAS= 1 2 LIAS BVDSS BVDSS-VDD 10V tP DUT VDD VDD ID(t) VDS(t) Time tP Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-810.A 7N20Z „ Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain-Source On-State Resistance Characteristics 4 3.5 Drain Current, ID (A) 3 2.5 2 1.5 1 0.5 0 0 0.8 0.2 0.4 0.6 Drain to Source Voltage, VDS (V) 0.01 VGS=10V, ID=3.5A 100 Drain Current, ID (µA) Maximum Safe Operation Area Drain current, ID (A) R D S( O N )L 10 im it 1 10µs 100µs 0.1 1ms 10ms 100ms TA=25ºC 0.1 1 10 DC 60 Drain-Source Voltage, VDS (V) UTC assumes no responsibility for equipment f ailures th at r esult f rom using pr oducts a t v alues that exceed, even momentarily, rated values ( such as maximum r atings, oper ating condition r anges, or other parameters) listed in pr oducts.


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