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UNISONIC TECHNOLOGIES CO., LTD 7N20Z
7A, 200V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UT C 7N20Z is an N-Chan nel en hancement mode po wer MOSFET providing c ustomers with e xcellent s witching p erformance and mi nimum on-state res istance. T his de vice can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N20Z is gen erally applied in low voltage applications, such as DC motor controls , audio amplifi ers and high efficiency switching DC/DC converters.
FEATURES
* Low Gate Charge: 5.8nC (TYP.) * Low CRSS: 10 pF (TYP.) * RDS(ON) = 0.58Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability
SYMBOL
ORDERING INFORMATION
Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube
Ordering Number Lead Free Halogen Free 7N20ZL-TN3-R 7N20ZG-TN3-R 7N20ZL-TN3-T 7N20ZG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-810.A
http://www.Datasheet4U.com
7N20Z
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current TC =25°C I A D 7 Pulsed Drain Current (Note 2) IDM 28 A Single Pulsed Avalanche Energy (Note 3) EAS 130 mJ Power Dissipation PD 2.5 W Operating Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L =26mH, IAS =7A, VDD =25V, RG =25Ω Starting TJ =25°C
THERMAL DATA
UNIT °C/W
PARAMETER SYMBOL RATINGS Junction to Ambient θJA 50 Note: When mounted on the minimum pad size recommended (PCB Mount)
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
MIN TYP MAX UNIT 200 1 ±10 4.0 0.58 0.69 190 60 10 5.8 1.4 2.5 7 24 13 19 25 60 35 50 7 28 1.5 250 75 13 7.5 V µA µA V Ω pF pF pF nC nC nC ns ns ns ns A A V
PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250µA Drain-Source Leakage Current IDSS V DS =200V, VGS =0V Gate-Source Leakage Current IGSS V GS =±25V, VDS =0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID =250µA 2.0 Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =3.5A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS =25V, VGS=0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=100V, ID=7A Gate Source Charge QGS (Note 1,2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=50V, ID=7A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD I S =7A, VGS =0V Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-810.A
7N20Z
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT RG
+ VDS L ISD
VGS
VDD Driver Same Type as DUT
dv/dt controlled by RG ISD controlled by pulse period
VGS (Driver)
D=
Gate Pulse Width Gate Pulse Period
10V
IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-810.A
7N20Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS
VGS QG
10V QGS
QGD
Charge Gate Charge Test Circuit Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
VDS RG ID BVDSS L IAS
2 EAS= 1 2 LIAS
BVDSS BVDSS-VDD
10V tP DUT VDD VDD
ID(t) VDS(t) Time
tP
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-810.A
7N20Z
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain-Source On-State Resistance Characteristics 4 3.5 Drain Current, ID (A) 3 2.5 2 1.5 1 0.5 0 0 0.8 0.2 0.4 0.6 Drain to Source Voltage, VDS (V) 0.01 VGS=10V, ID=3.5A 100
Drain Current, ID (µA)
Maximum Safe Operation Area
Drain current, ID (A)
R
D S( O N
)L
10
im
it
1
10µs 100µs
0.1
1ms 10ms 100ms TA=25ºC 0.1 1 10 DC 60
Drain-Source Voltage, VDS (V)
UTC assumes no responsibility for equipment f ailures th at r esult f rom using pr oducts a t v alues that exceed, even momentarily, rated values ( such as maximum r atings, oper ating condition r anges, or other parameters) listed in pr oducts.