FDB38N30U

FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET November 2013 FDB38N30U Features R DS(on) = N-Channel UniFETTM Ultra FRFETTM MOSFET 300 V, 38 A, 120 mΩ Description UniFETTM MOSFET is Fairchild Semicondu ctor’s hig h voltage MOSFET family based on planar stripe and DMOS techn ology. This MOSFET is tailored to r educe on-state r esistance, and to provide be tter switching performance and higher avalanche energy streng th. UniFET Ultra F RFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the r everse dv/dt immunity is 20V/nsec while normal planar MOSF ETs have over 200 nsec and 4 .5V/nsec respectively. Ther efore UniFET Ultra FRFET MO SFET can remove additional component and improve system r eliability in certain applications that require performance improvement of the MOSFET’s bo dy diode. Th is dev ice family is suitable for switching power co nverter applications su ch as power factor correction (PFC ), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D D G 120 mΩ (Max.) @ VGS = 10 V, ID = 19 A Low Gate Charge (Typ. 56 nC) L ow Crss (Typ. 55 pF) 100% Avalanche Tested R oHS Compliant Applications Uninterruptible Power Supply LCD/LED/PDP TV AC-DC Power Supply G S D2-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain C urrent Drain Current Single Pu...