FDMC7678

FDMC7678 N-Channel Power Trench® MOSFET FDMC7678 N-Channel Power Trench® MOSFET 30 V, 19.5 A, 5.3 mΩ Features „ Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A „ Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant November 2013 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application „ DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Bottom 8 7 6 5 DD D D D D D D 5 6 7 8 4 3 2 1 G S S S 1 2 3 4 G S S S Pin 1 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) Note ( 4) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 19.5 63 17.5 70 54 31 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction...