Features
Fast Read Access Time – 150 ns Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation Low Power Dissipation – 50 mA Active Current – 200 µA CMOS Standby Current Hardware and Software Da...
