IPB108N15N3 G
IPP111N15N3 G IPI111N15N3 G
OptiMOS 3 Power-Transistor
TM
Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified accord...
