Power MOSFETs. IRF540 Datasheet

IRF540 MOSFETs. Datasheet pdf. Equivalent


Harris IRF540
Semiconductor
November 1997
IRF540, IRF541, IRF542,
IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
Features
• 25A and 28A, 80V and 100V
• rDS(ON) = 0.077and 0.100
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field eff ect tr ansistors. The y are adv anced po wer
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdo wn avalanche mode
of operation. All of these po wer MOSFETs are designed f or
applications such as s witching regulators, switching conver-
tors, motor dr ivers, relay drivers, and dr ivers for high po wer
bipolar s witching tr ansistors requir ing high speed and lo w
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17421.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF540
TO-220AB
IRF540
IRF541
TO-220AB
IRF541
IRF542
TO-220AB
IRF542
IRF543
TO-220AB
IRF543
RF1S540
TO-262AA
RF1S540
RF1S540SM
TO-263AB
RF1S540SM
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number
2309.3
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IRF540 Datasheet
Recommendation IRF540 Datasheet
Part IRF540
Description N-Channel Power MOSFETs
Feature IRF540; Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 a.
Manufacture Harris
Datasheet
Download IRF540 Datasheet




Harris IRF540
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF540, RF1S540,
RF1S540SM
IRF541
IRF542
IRF543
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . .
TC = 100oC . . . . . . . . . . . . . . . . . . . .
...
...
...........
...........
.
.
ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . .
100
100
28
20
110
±20
150
1
80 100 80 V
80 100 80 V
28 25 25 A
20 17 17 A
110 100 100 A
±20 ±20 ±20 V
150 150 150 W
1 1 1 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
230
-55 to 175
300
260
230
-55 to 175
230
-55 to 175
230
-55 to 175
300 300 300
260 260 260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF540, IRF542,
RF1S540, RF1S540SM
BVDSS ID = 250µA, VGS = 0V (Figure 10)
100 - - V
IRF541, IRF543
80 - - V
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF540, IRF541,
RF1S540, RF1S540SM
VGS(TH) VGS = VDS, ID = 250µA2
IDSS VDS = Rated BVDSS, VGS = 0V
VDS
TJ =
= 0.8 x
150oC
Rated
BVDSS,
VGS
=
0V
ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V
(Figure 7)
-4 V
- - 25 µA
- - 250 µA
28 - - A
IRF542, IRF543
25 - - A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF540, IRF541,
RF1S540, RF1S540SM
IGSS VGS = ±20V
rDS(ON) ID = 17A, VGS = 10V (Figures 8, 9)
- - ±100 nA
- 0.060 0.077
IRF542, IRF543
- 0.080 0.100
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS 50V, ID = 17A (Figure 12)
8.7 13
-
td(ON) VDD = 50V, ID 28A, RG 9.1, RL = 1.7
-1 5 23
(Figures 17, 18) MOSFET Switching Times are
tr Essentially Independent of Operating
- 70 110
td(OFF) Temperature
-4 0 60
tf -5 0 75
Qg(TOT) VGS = 10V, ID = 28A, VDS = 0.8 x Rated
-3 8 59
BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Op-
Qgs erating Temperature
-8
-
Qgd
-2 1
-
S
ns
ns
ns
ns
nC
nC
nC
5-2



Harris IRF540
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance
Junction to Ambient
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
- 1450
- 550
-
-
pF
pF
CRSS
- 100
-
pF
LD Measured From the
Modified MOSFET
-
Contact Screw on Tab Symbol Showing the
To Center of Die
Internal Devices
Measured From the
Drain Lead, 6mm
Inductances
D
-
(0.25in) from Package to
LD
Center of Die
3.5
4.5
-
-
nH
nH
LS Measured From the
Source Lead, 6mm
G
(0.25in) From Header to
Source Bonding Pad
LS
- 7.5
-
nH
S
RθJC
RθJA
RθJA
Free Air Operation
RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad
-- 1 oC/W
- - 80 oC/W
-- 62 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
G
MIN TYP MAX UNITS
- - 28 A
D
- - 110 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs
--
70 150
0.44 1.0
2.5
300
1.9
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 440µH, RG = 25, peak IAS = 28A. (Figures 15, 16).
V
ns
µC
5-3







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