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RF1S540SM Dataheets PDF



Part Number RF1S540SM
Manufacturers Harris
Logo Harris
Description N-Channel Power MOSFETs
Datasheet RF1S540SM DatasheetRF1S540SM Datasheet (PDF)

Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, .

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Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421. November 1997 Features • 25A and 28A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB BRAND IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM Symbol D G S NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 2309.3 http://www.Datasheet4U.com 5-1 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF540, RF1S540, RF1S540SM 100 100 28 20 110 ±20 150 1 230 -55 to 175 300 260 IRF541 80 80 28 20 110 ±20 150 1 230 -55 to 175 300 260 IRF542 100 100 25 17 100 ±20 150 1 230 -55 to 175 300 260 IRF543 80 80 25 17 100 ±20 150 1 230 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 150oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage IRF540, IRF542, RF1S540, RF1S540SM IRF541, IRF543 Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250µA, VGS = 0V (Figure 10) 100 80 VGS(TH) IDSS VGS = VDS, ID = 250µA2 VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 150oC 4 25 250 V V V µA µA MIN TYP MAX UNITS On-State Drain Current (Note 2) IRF540, IRF541, RF1S540, RF1S540SM IRF542, IRF543 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF540, IRF541, RF1S540, RF1S540SM IRF542, IRF543 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V (Figure 7) 28 25 - ±100 A A nA Ω Ω S ns ns ns ns nC nC nC IGSS rDS(ON) VGS = ±20V ID = 17A, VGS = 10V (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 28A, VDS = 0.8 x Rated BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS ≥ 50V, ID = 17A (Figure 12) VDD = 50V, ID ≈ 28A, RG ≈ 9.1Ω, RL = 1.7Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 8.7 -1 -4 -5 -3 -8 -2 0.060 0.080 13 5 70 0 0 8 0.077 0.100 23 110 60 75 59 - 1 - 5-2 IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inducta.


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