K2025-01 Datasheet PDF | Fuji Electric





(PDF) K2025-01 Datasheet PDF

Part Number K2025-01
Description N-channel MOS-FET
Manufacture Fuji Electric
Total Page 2 Pages
PDF Download Download K2025-01 Datasheet PDF

Features: 2SK2025-01 FAP-IIA Series > Features Hig h Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power H igh Voltage VGS = ± 30V Guarantee Aval anche Proof N-channel MOS-FET 600V 2, 4Ω 4A 60W > Outline Drawing > App lications Switching Regulators UPS DC-D C converters General Purpose Power Ampl ifier > Maximum Ratings and Characteri stics - Absolute Maximum Ratings (TC=25 °C), unless otherwise specified Item D rain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pu lsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and St orage Temperature Range Symbol V DS V D GR ID I D(puls) V GS PD T ch T stg Rati ng 600 600 4 16 ±30 60 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics ( TC=25°C), unless otherwise specified I tem Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage D rain Current Gate Source Leakage Curren t Drain Source On-State Resistance Forward Transconductance Input Capacit.

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K2025-01 datasheet
2SK2025-01
FAP-IIA Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Drain-Gate-Voltage (RGS=20K)
Continous Drain Current
Pulsed Drain Current
V DS
V DGR
ID
I D(puls)
600
600
4
16
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
Operating and Storage Temperature Range
PD
T ch
T stg
60
150
-55 ~ +150
N-channel MOS-FET
600V 2,4Ω 4A 60W
> Outline Drawing
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=600V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=2A
VGS=10V
Forward Transconductance
g fs ID=2A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=4A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10
I AV L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
600
2,5
2
4
Typ. Max.
3,0
10
0,2
10
2,0
4
1000
85
20
20
15
45
15
3,5
500
1,0
100
2,4
1500
130
30
30
25
70
25
4
16
1,1 1,65
400
2
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75 °C/W
2,08 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

K2025-01 datasheet   K2025-01 datasheet  






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