AP4503AGM-HF

AP4503AGM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement D2 D2 D1 D1 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 S2 30V 28mΩ 6.9A -30V 36mΩ -6.3A ▼ Low On-resistance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free SO-8 S1 G1 P-CH BVDSS RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 +20 6.9 5.5 20 2 -55 to 150 -55 to 150 P-channel -30 +20 -6.3 -5 -20 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W 1 201011252 Data and specifications subject to change without notice http://www.Datasheet4U.com AP4503AGM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditi...