Document
Advanced Power Electronics Corp.
AP4503AGM-HF-3
Complementary N and P-channel Enhancement-mode Power MOSFETs
Simple Drive Requirement
D2
Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free
D1
D1
D2
N-CH
G2 S2
BV DSS RDS(ON) ID BVDSS RDS(ON) ID
D1
30V 28mΩ 6.9A -30V 36mΩ -6.3A
D2
G1
SO-8
S1
P-CH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP4503AGM-HF-3 is in a standard SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives.
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 30 ±20 6.9 5.5 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -6.3 - 5. 0 -20
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 62.5
Unit °C/W
Ordering Information
AP4503AGM-HF-3TR : in RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201011252-3
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Advanced Power Electronics Corp.
AP4503AGM-HF-3
N-channel Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=4A
Min. 30 1 -
Typ. 6 8.4 1.4 4.7 5 8 18.5 9 485 80 75
Max. Units 28 42 3 1 25 ±100 13.5 770 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=30V, VGS=0V
V DS=24V, VGS=0V, Tj=70°C
I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-Source Leakage Total Gate Charge
2
VGS=±20V, VDS=0V I D = 6A VDS=24V VGS=4.5V VDS=20V ID=1A RG=3.3Ω, VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=1.7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 19 11
Max. Units 1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
AP4503AGM-HF-3
P-channel Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-6.0A VGS=-4.5V, ID=-4.0A
Min. -30 -1 -
Typ. 6 -12.4 2 7 8 7 34 26 860 150 140
Max. Units 36 55 -3 1 -25 ±100 20 1380 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-30V, VGS=0V
V DS=-24V, V GS =0V, Tj=70°C
I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-Source Leakage Total Gate Charge
2
VGS=±20V, VDS=0V ID=-6A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω, VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=-1.7A, VGS=0V IS=-6A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 23 14
Max. Units -1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLE.