UDT1605

UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR „ DESCRIPTION The UT C UDT1605 is a n NPN Dar lington transistor. Utilizing UTC’s advanced techon ology, UDT1605 features ultra- high D C current gai n and lo w c ollector-emitter saturation volta ge, making it suitable for efficient driving functions. The U TC UDT1605 is suita ble for a vari ety of efficient drivin g functions, etc. „ FEATURES * High breakdown voltage * Low saturation voltage * Ultra-high DC current gain „ SYMBOL „ RDERING INFORMATION Ordering Number Lead Free Halogen Free UDT1605L-AB3-R UDT1605G-AB3-R UDT1605L-AB3-R (1)Packing Type (2)Package Type (3)Halogen Free (1) R: Tape Reel (2) AB3: SOT-89 (3) G: Halogen Free, L: Lead Free Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-048.A http://www.Datasheet4U.com UDT1605 „ Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A 1W Power Dissipation at TA=25°C (Note 1) PD Linear Derating Factor 8 mW/°C 2.8 W Power Dissipation at TA=25°C (Note 2) PD Linear Derating Factor 22 mW/°C Junction Temperature TJ: -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note...