UNISONIC TECHNOLOGIES CO., LTD
UGP7N60
Preliminary
Insulated Gate Bipolar Transistor
600V, SMPS N-CHANNEL IGBT
DE...
UNISONIC TECHNOLOGIES CO., LTD
UGP7N60
Preliminary
Insulated Gate Bipolar
Transistor
600V, SMPS N-CHANNEL IGBT
DESCRIPTION
The UTC UGP7N60 is a N-channel IGBT. it uses UTC’s advanced technology to provide customers with high input impedance, high switching speed and low conduction loss, etc.
The UTC UGP7N60 is suitable for high voltage switching, high frequency switch mode power supplies.
FEATURES
* >100kHz Operation at 390V, 7A * 200kHz Operation at 390V, 5A * 600V Switching SOA Capability * High switching speed * High input impedance * Low conduction loss
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UGP7N60L-TA3-T
UGP7N60G-TA3-T
TO-220
UGP7N60L-TF3-T
UGP7N60G-TF3-T
TO-220F
UGP7N60L-TN3-R
UGP7N60G-TN3-R
TO-252
Note: Pin Assignment: G: Gate C: Collector E: Emitter
Pin Assignment 123 GCE GCE GCE
Packing
Tube Tube Tape Reel
www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 4
QW-R203-048.e
UGP7N60
MARKING
Preliminary
Insulated Gate Bipolar
Transistor
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-048.e
UGP7N60
Preliminary
Insulated Gate Bipolar
Transistor
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCES
600
V
Continuous Collector Current
TC=25°C TC=110°C
IC
34 14
A A
Collector Current Pulsed (Note 2) Gate to Emitter Voltage Continuous
ICM VGES
56 ±20
A V
Gate to Emitter Vo...