UN2488

UNISONIC TECHNOLOGIES CO., LTD UN2488 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SLICON POWER TRANSISTOR  DESCRIPTION The U TC UN2488 is an NPN epitaxial trans istor, it uses U TC’s advanced tec hnology t o provide the customers with hig h collector-emitter breakdown voltage and u ltra-high DC curr ent gain, etc.  FEATURES * High collector-emitter breakdown voltage * Ultra-high DC current gain  ORDERING INFORMATION Package TO-3P Pin Assignment 1 2 3 B C E Packing Tube Ordering Number Lead Free Halogen Free UN2488L-x-T3P-T UN2488G-x-T3P-T Note: Pin Assignment: A: Anode, K: Cathode  MARKING INFORMATION PACKAGE MARKING TO-3P www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-024.a http://www.Datasheet4U.com UN2488  Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 10 A Base Current IB 1 A Collector Power Dissipation (TC=25°C) PC 150 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) SYMBOL TEST CONDITIONS ICBO V CB=160V, IE=0A IE...