UP1620

UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR  DESCRIPTION The U TC UP1 620 is a silico n PNP silicon po wer transis tor, it uses UT C’s a dvanced techn ology to provi de the customers with high co llector-emitter breakd own volta ge a nd ultra-h igh DC curren t gain, etc.  FEATURES * High collector-emitter breakdown voltage * Ultra-high DC current gain  ORDERING INFORMATION Package TO-3P Pin Assignment 1 2 3 B C E Packing Tube Ordering Number Lead Free Halogen Free UP1620L-x-T3P-T UP1620G-x-T3P-T Note: Pin Assignment: A: Anode, K: Cathode  MARKING INFORMATION PACKAGE MARKING TO-3P www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-025.a http://www.Datasheet4U.com UP1620  Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1 A Collector Power Dissipation (TC=25°C) Pc 150 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) ICBO IEBO VCEO hFE VCE(s...