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US1A Dataheets PDF



Part Number US1A
Manufacturers TAIWAN SEMICONDUCTOR
Logo TAIWAN SEMICONDUCTOR
Description 1.0AMP High Efficient Surface Mount Rectifiers
Datasheet US1A DatasheetUS1A Datasheet (PDF)

creat by ART US1A - US1M 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC Pb RoHS COMPLIANCE Features — — — — — — — — — — — Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Ultrafast recovery time for high efficiency Low forward voltage, low power loss High temperature soldering guaranteed: 260 ℃/10 seconds on terminals Plastic material used carries Underwriters Laboratory C.

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creat by ART US1A - US1M 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC Pb RoHS COMPLIANCE Features — — — — — — — — — — — Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Ultrafast recovery time for high efficiency Low forward voltage, low power loss High temperature soldering guaranteed: 260 ℃/10 seconds on terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data — — — Case: Molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Dimensions in inches and (millimeters) Marking Diagram US1X G Y= WW = Specific Device Code = Green Compound Year = Work Week — Weight: 0.064 grams Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) @1A Maximum Reverse Current @ Rated VR T A=25 ℃ T A=125 ℃ Symbol US1A US1B US1D US1G US1J US1K US1M VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj Unit V V V A A 50 35 50 100 70 100 200 140 200 400 280 400 1 30 600 420 600 800 560 800 1000 700 1000 1.0 5 150 50 15 75 27 - 55 to + 150 - 55 to + 150 1.7 V uA Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle 75 10 O nS pF C/W O O RθjA RθjL TJ TSTG C C Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:G11 http://www.Datasheet4U.com RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M) FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE 1.5 AVERAGE FORWARD CURRENT (A) 50 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3mS Single Half Sine Wave JEDEC Method RESISTIVE OR INDUCTIVE 1 PEAK FORWARD SURGE A CURRENT (A) 175 40 30 20 10 0 0.5 0 0 25 50 75 100 125 150 LEAD TEMPERATURE (oC) 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 3 TYPICAL FORWARD CHARACTERISRICS 10 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) US1A-US1G INSTANTANEOUS REVERSE CURRENT (uA) TA=100℃ 10 1 0.1 US1J-US1M 1 TA=25℃ 0.1 0.01 PULSE WIDTH=300uS 1% DUTY CYCLE 0.001 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) 0.01 0 20 40 608 0 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 5 TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE A (℃/W) FIG. 6 TYPICAL .


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