UT75N02

UNISONIC TECHNOLOGIES CO., LTD UT75N02 Preliminary Power MOSFET 75A, 25V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 TO- 251 The UTC UT75N02 uses advanced trench technology to provide excellent R DS(ON), lo w gat e charg e an d o peration with low g ate voltages. This device is s uitable for use as a load switch or in PW M applications. „ FEATURES 1 TO-220 * RDS(ON)< 7mΩ @ VGS=10V * RDS(ON)< 8mΩ @ VGS=7V „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Package TO-220 TO-251 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube Ordering Number Lead Free Halogen Free UT75N02L-TA3-T UT75N02G-TA3-T UT75N02L-TM3-T UT75N02G-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-328.c http://www.Datasheet4U.com UT75N02 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 75 A Pulsed Drain Current (Note 2) IDM 170 A Avalanche Current IAR 60 A Avalanche Energy L=0.1mH EAS 140 mJ Repetitive Avalanche Energy (Note 3) L=0.05mH EAR 5.6 mJ TO-220 40 Power Dissipation PD W TO-251 28 Junction Temperature TJ + 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1.Absolute ma ximum ratings a re those v alues be yond which the d evice could be permanently dam aged. Absolute maximum ratings are stress ratings only and functional device op...